Quantitative measurements of Ge surface segregation during SiGe alloy growth

Ge segregation during the growth of Si_{1 − x}Ge_x alloys (x = 5, 10, 20, and 40%) was studied using X-ray photoelectron spectroscopy. The alloys were grown in thicknesses up to 20.0 nm at 500°C to measure quantitatively the amount of segregated surface Ge. The length of alloy needed to reach steady-state growth edge was found to decrease with increasing alloy concentration (4.8, 2.8, 2.4, and 2.0 nm, respectively). It was found that each alloy had a complete monolayer of Ge on the surface and an increasing amount of segregated Ge in the second layer (20, 55, 80, and 95%, respectively) during steady-state growth. An increase in the temperature of alloy growth (400–750°C) resulted in an increase in the leading edge of alloy growth but did not change the amount of segregated Ge during steady-state growth. We propose that film stress is responsible for the amount of Ge segregation.     

Development of a finite-element analysis methodology for the propagation of delaminations in composite structures

Analysing the collapse of skin-stiffened structures requires capturing the critical phenomenon of skin-stiffener separation, which can be considered analogous to interlaminar cracking. This paper presents the development of a numerical approach for simulating the propagation of interlaminar cracks in composite structures. A degradation methodology was introduced in MSC.Marc, which involved the modelling of a structure with shell layers connected by user-defined multiple-point constraints (MPCs). User subroutines were written that employ the virtual crack closure technique (VCCT) to determine the onset of crack growth and modify the properties of the user-defined MPCs to simulate crack propagation. Methodologies for the release of failing MPCs are presented and are discussed with reference to the VCCT assumption of self-similar crack growth. The numerical results obtained by using the release methodologies are then compared with experimental data for a double-cantilever beam specimen. Based on this comparison, recommendations for the future development of the degradation model are made, especially with reference to developing an approach for the collapse analysis of fuselage-representative structures. Russian translation published in Mekhanika Kompozitnykh Materialov, Vol. 43, No. 1, pp. 15–42, January–February, 2007.     

Optical design of a toroidal grating monochromator based beam line on Indus-1

In this paper, we discuss the detailed optical design of a beam line that is under construction on the synchrotron radiation source, Indus-1. Toroidal mirrors are used as pre-and post- focusing elements and a toroidal grating monochromator as a dispersing element. Using three interchangeable gratings, this monochromator will give, at a moderate resolution, a good throughput on the sample in the wavelength range 40 to 1000 Å. Effect of various parameters and their optimization on the resolution and throughput characteristics have been studied by ray tracing calculations, and presented.     

高斯光束照射下的圆盘夫琅禾费衍射

推导了高斯光束照射圆孔或圆盘的衍射场普遍表达式，计算了半波带数接近于零的情况下上述衍射场的数据，进而分析了圆盘衍射场在艾里斑中增加一个暗环的原因。     

电子束装置运行稳定性的测量

 为了验证电子束装置的稳定性,分别对电流波形、电压波形进行了多次测量,对二极管放电时注入腔中电子均匀性进行了探测,最后改变二极管真空度测量了泵浦氩的荧光 谱的稳定性。     

工业CT图像均匀性校正

在工业CT图像重建过程中,射束硬化使得图像出现“杯状”伪影,阵列探测器响应不一致使得图像出现环状伪影、带状伪影和点伪影,影响图像均匀性.本文分析了射束硬化的原理和探测器响应不一致的数学模型,并通过实验,对探测器响应进行多挡板定标得到校正系数表.利用查表插值的方法对投影数据进行均匀性校正,消除上述伪影.     

截断光束的广义M2因子

使用渐近分析法、广义截断二阶矩法和自收敛束宽法研究了旋转对称截断光束的广义M2因子，分析了这三种方法的物理联系以及如何惟一确定广义M2因子问题，并用数值计算结果做了说明. 关键词： 广义M2因子 渐近分析 广义截断二阶矩法 自收敛束宽     

合肥光源二分割三角型光位置检测器的研制

介绍了一种用于合肥光源的二分割三角型光位置检测器的研制,对其主要性能(如灵敏度和线性范围)进行了理论分析和实际测量,测量结果与理论分析相当吻合.文中还给出了光位置测量系统的组成     

体全息存储系统读出图像的放大率的补偿算法研究

在1∶1体全息存储系统的读出过程中,保证图像的不失真和降低误码率是最关键的问题。提出了一种新颖的放大率补偿算法,定量分析了放大率偏移误差对图像的影响,并通过理论推导和实验模拟证明了这一算法的可行性。     

分子束外延生长赝配高电子迁移率超高速微结构功能材料里深中心识别

应用深能级瞬态谱(DLTS)技术研究分子束外延(MBE)生长的highelectronmobilitytransistors(HEMT)和Pseudomorphichighelectronmobilitytransistors(PHEMT)结构深中心行为.样品的DLTS谱表明,在HEMT和PHEMT结构的nAlGaAs层里存在着较大浓度(1015-1017cm-3)和俘获截面(10-16cm2)的近禁带中部电子陷阱.它们可能与AlGaAs层的氧含量有关.同时还观察到PHEMT结构晶格不匹配的AlGaAsInGaAsGaAs系统在AlGaAs里产生的应力引起DX中心(与硅有关)能级位置的有序移动.其移动量可作为应力大小的一个判据,表明DLTS技术是定性识别此应力的可靠和简便的工具. 关键词： 分子束外延生长 高电子迁移率超高速微结构功能材料 深中心